BAS35【PDF 1/2 页】DIODE GEN PURP 120V 200MA SOT-23

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BAS35

?2001 Fairchild Semiconductor Corporation

BAS35, Rev. C

BAS35

Small Signal Diode

Absolute Maximum Ratings*

= 25°C unless otherwise noted

Operating Junction Temperature 150

These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

NOTES:

1) These ratings are based on a maximum junction temperature of 150 degrees C.

2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

Thermal Characteristics

Electrical Characteristics

= 25°C unless otherwise noted

Symbol

Parameter

Value

Units

VRRM

Maximum Repetitive Reverse Voltage 120 V

IF(AV)

Average Rectified Forward Current 200 mA

IFSM

Non-repetitive Peak Forward Surge Current

Pulse Width = 1.0 second

Pulse Width = 1.0 microsecond

1.0

2.0

Tstg

Storage Temperature Range -55 to +150

°C

Symbol

Parameter

Value

Units

Power Dissipation 350 mW

RθJA

Thermal Resistance, Junction to Ambient 357

°C/W

L22

Connection Diagram

SOT-23

Symbol

Parameter

Test Conditions

Min

Max

Units

Breakdown Voltage

IR = 1.0 mA 120

Forward Voltage I

F = 10 mA

IF = 50 mA

IF = 100 mA

IF = 200 mA

IF = 400 mA

750

840

900

1.0

1.25

Reverse Current V

R = 90 V

100

VR = 90 V, TA = 150°C

100

μA

Total Capacitance

VR = 0, f = 1.0 MHz

35 pF

trr

Reverse Recovery Time IF = IR = 10 mA, IRR = 1.0 mA,

RL = 100 ?

50 ns

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