BAS35
?2001 Fairchild Semiconductor Corporation
BAS35, Rev. C
BAS35
Small Signal Diode
Absolute Maximum Ratings*
TA
= 25°C unless otherwise noted
Operating Junction Temperature 150
*
J
These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
Electrical Characteristics
TA
= 25°C unless otherwise noted
Symbol
Parameter
Value
Units
VRRM
Maximum Repetitive Reverse Voltage 120 V
IF(AV)
Average Rectified Forward Current 200 mA
IFSM
Non-repetitive Peak Forward Surge Current
Pulse Width = 1.0 second
Pulse Width = 1.0 microsecond
1.0
2.0
A
A
Tstg
Storage Temperature Range -55 to +150
°C
T
°C
Symbol
Parameter
Value
Units
PD
Power Dissipation 350 mW
RθJA
Thermal Resistance, Junction to Ambient 357
°C/W
1
2
3
L22
12
3
Connection Diagram
3
1
2
SOT-23
Symbol
Parameter
Test Conditions
Min
Max
Units
VR
Breakdown Voltage
IR = 1.0 mA 120
V
VF
Forward Voltage I
F = 10 mA
IF = 50 mA
IF = 100 mA
IF = 200 mA
IF = 400 mA
750
840
900
1.0
1.25
mV
mV
mV
V
V
IR
Reverse Current V
R = 90 V
100
nA
VR = 90 V, TA = 150°C
100
μA
CT
Total Capacitance
VR = 0, f = 1.0 MHz
35 pF
trr
Reverse Recovery Time IF = IR = 10 mA, IRR = 1.0 mA,
RL = 100 ?
50 ns
相关PDF资料
BAS40-04LT1G DIODE SCHOTTKY DUAL 40V SOT23
BAS40-06LT1G DIODE SCHOTTKY 40V CA SOT23
BAS40BRW-7 DIODE SCHOTTKY ARRAY 40V SC70-6
BAS40V-7 DIODE SCHOTTKY 150MW 40V SOT-563
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BAS70-04-V-GS08 DIODE SCHOTKY SS 70V 200MA SOT23
BAS70-04LT1G DIODE SCHOTTKY DUAL 70V SOT-23
BAS70BRW-7 DIODE SCHOTTKY 70V 200MW SOT363
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